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Magazine Name : Ieee Transactions On Electron Devices

Year : 2004 Volume number : 51 Issue: 05

Unified Ac Model For The Resonant Tunneling Diode (Article)
Subject: Quantum Capacitance , Quantum Inductance
Author: Qingmin Liu      Alan Seabaugh     
page:      653 - 657
Reduction Of Base-Transit Time Of Inp-Gainas Hbts Due To Electron Injection From An Energy Ramp And Base-Composition Grading (Article)
Subject: Base-Composition Grade , Base-Transit Time
Author: Gal Zohar      Shimon Cohen     
page:      658 - 662
High Activity Of B During Solid-Phase Epitaxy In A Pre-Amorphized Layer Formed By Ge Ion Implantation And Deactivation During A Subsequent Thermal Process (Article)
Subject: Activation , Boron , Deactivation
Author: Kunihiro Suzuki      H Tashiro     
page:      663 - 668
Lsser Thermal Processing Of Amphous Silicon Gates To Reduce Poly-Depletion In Cmos Devices (Article)
Subject: Boron Penetration , Gate Oxide
Author: Yung Fu Chong      Hans-Joachim Gossmann     
page:      669 - 676
Modeling Spiral Inductors In Sos Processes (Article)
Subject: Eddy Current , Inductance
Author: W. B Kuhn      X He     
page:      677 - 683
Simulation Of Quantum Transport In Monolithic Ics Based On In0.53 Ga0.47 As-In0.52al0.48as Rtds And Hemts With A Quantum Hydrodynamic Transport Model (Article)
Subject: Device Simulation , High Electron Mobility
Author: Jan Hontschel      Roland Stenzel     
page:      684 - 692
Effect Of Stochastic Dead Space On Noise In Avalanche Photodiodes (Article)
Subject: Avalanche Photodiodes , Excess Noise Factor
Author: Oh-Hyun Kwon      M M Hayat     
page:      693 - 700
Drain Disturb During Chisel Programming Of Nor Flash Eeproms-Physical Mechanisms And Impact Of Technological Parameters (Article)
Subject: Band-To-Band -Tunneling , Channel Hot Electron (Che)
Author: Deleep R. Nair      S Mahapatra     
page:      701 - 707
Using Layout Technique And Direct-Tunneling Mechanism To Promote Dc Performance Of Partially Depleted Soi Devices (Article)
Subject: Direct Tunneling , Floating Body
Author: Shiao-Shien. Chen      Shiang Huang-Lu     
page:      708 - 713
Low-Field Amorphous State Resistance And Tyhreshold Voltage Drift In Chalcogenide Materials (Article)
Subject: Chalcogenide , Nonvolatile
Author: A. Pirovano      Andrea L Lacaita     
page:      714 - 719
An Enduranceevaluation Method For Flash Eeprom (Article)
Subject: Dynamic Stresses , Evaluation
Author: Nian-Kai Zous      Chi-Yuan Chin     
page:      720 - 725
Test Structure Measuring Inter- And Interlayer Coupling Capacitance Of Interconnection With Subfemtofarad Resolution (Article)
Subject: Capacitance Measurement , Integrated Circuit
Author: Tatsuya Kunikiyo      Tetsuya Watanabe     
page:      726 - 735
Test Structure Measureing Inter- And Intralayer Coupling Capacitance Of Interconnection With Subfemtofarad (Article)
Subject: Capacitance Measurement , Integrated Circuit
Author: Tatsuya Kunikiyo      T Watanabe     
page:      726 - 735
Influence Of Dielectric Constant Distribution In Gate Dielectric On The Degradation Of Electron Mobility By Remote Coulomb Scattering In Inversion Layers (Article)
Subject: Dielectric Constant , High Rate Wireless Data
Author: Mizuki Ono      Kenji Ishihara     
page:      736 - 740
Full Band Approachto Tunneling In Mos Structures (Article)
Subject: Metal-Oxide Semiconductor , Tight-Binding
Author: F. Sacconi      Aldo Di. Carlo     
page:      741 - 748
Effect Ofdiscrete Impurities On Electron Transport In Ultrashort Mosfet Using 3-D Mc Simulation (Article)
Subject: Doping Fluctuations
Author: Philippe Dollfus     
page:      749 - 756
0.13-Um Low-Cu Cmos Logic-Based Technology For 2.1-Gb High Data Rate Read-Channel (Article)
Subject: Dual , High-Performance , Powder Production
Author: B.Z Guo      A Lientz     
page:      757 - 763
On The Calculation Of The Quasi-Bound-State Energies And Lifetimes In Inverted Mos Structures With Ultrathin Oxide And Its Application To The Direct Tunneling Current (Article)
Subject: Direct Tunneling , Inversion Layers
Author: Bogdan Govoreanu      Langseth Magnus     
page:      764 - 773
Band Diagram And Carrier Conduction Mechanisms In Zro2 Mis Structures (Article)
Subject: Band Diagram , Carrier Conduction
Author: Takahiro Yamaguchi      H Satake     
page:      774 - 779
Low-Frequency Noise Behavior Of Sio2-Hfo2 Dual -Layer Gate Dielectric In Mosfets With Different Interfacial Oxide Thickness (Article)
Subject: Charge Trapping , Hfo2
Author: Eddy Simoen      A Mercha     
page:      780 - 784
The Effects Of Isoelectronic Al Doping And Process Optimization For The Fabrication Of High-Power Algan-Gan Hemts (Article)
Subject: Field-Effect Transistors , Gallium Nitride
Author: B. Youn      C. M Lee     
page:      785 - 789
High-Power Soi Vertical Transistors With Lateral Drain : Process Developments Characterization, And Modeling (Article)
Subject: Bipolar Transistor , Parasitic Capacitances
Author: Kuntjoro Pinardi      Ulrich Heinle     
page:      790 - 796
A Novel Low On-Resistance Schottky-Barrier Diode With P-Buried Floating Layer Structure (Article)
Subject: Buried Layer Structure , Low On-Resistance
Author: Waturu Saito      Ichiro Omura     
page:      797 - 802
Resonant Response Of A Fet To An Ac Signal: Influence Of Magnetic Field, Device Length, And Temperature (Article)
Subject: Field-Effect Transistors , High-Electron Mobility
Author: Manvir Singh Kushwaha      Panagiotis Vailopoulos     
page:      803 - 813